The MB85RC256V is a high-performance, 256-kilobit (32 kilobytes) Ferroelectric Random Access Memory (F-RAM) chip designed for applications requiring fast, frequent, and highly reliable data logging. Utilizing an industry-standard, high-speed I2C interface operating at up to 1 MHz, it serves as a seamless, drop-in replacement for conventional EEPROMs while offering vastly superior performance. Unlike traditional non-volatile memory, the MB85RC256V features virtually unlimited write endurance (10^12 read/write cycles) and eliminates write-delay times, ensuring critical data is captured instantly without risk of corruption during sudden power losses. With its ultra-low power consumption and robust data retention spanning decades, this Fujitsu-engineered IC is an ideal choice for smart metering, industrial automation, medical equipment, and advanced IoT devices.
Memory Density: 256 Kbits (32KB) of non-volatile ferroelectric memory.
High-Speed Interface: Standard I2C serial interface supporting Standard (100 kHz), Fast (400 kHz), and High-Speed (1
MHz) modes.
Virtually Unlimited Endurance: Engineered for 10^12 (1 trillion) read/write cycles—far exceeding standard EEPROM limits.
Instantaneous Writes: Eliminates the polling and write-delay times common in traditional non-volatile memories, capturing data at bus speed.
Wide Supply Voltage Range: Operates efficiently across a wide voltage spectrum from 2.7V to 5.5V.
Ultra-Low Power Consumption: Low operating current (typically 200 µA at 1
MHz) and minimal standby current to maximize battery life.
Exceptional Data Retention: Safely retains logged data for over 10 years at +85°C.
Industrial Reliability: Built to operate stably across a broad temperature range of -40°C to +85°C.
Compact Footprint: Available in standard, space-saving 8-pin SOP (Small Outline Package) configurations for easy PCB integration.